TSB10N60M / TSI10N60M TSB10N60M / TSI10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features - 10A, 600V, RDS(on) = 0.
75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK ...

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