SSM25G45EM
N-CHANNEL INSULATED-GATE BIPOLAR
TRANSISTOR
High input impedance High peak current capability 4.
5V gate drive
C C C C
SO-8
G E E E
Absolute Maximum Ratings
Symbol
Parameter
VCE Collector-Emitter Voltage
VGE Gate-Emitter Voltage
VGEP
Pulsed Gate-Emitter Voltage
ICP PD @ TC=25°C1
Pulsed Collector Current Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
VCE ICP
G
Rating 450 ±6 ±8 150 2.
5
-55 to 150 -55 to 150
450V 150A
C
E
Units V V V A W °C °C
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V...