PRODUCT SUMMARY Low on-resistance Capable of 2.
5V gate drive Surface mount package DESCRIPTION SSM9926TGO N-CHANNEL ENHANC8 EMENT MODE POWER MOSFET A t D1 D2 G1 G2 S1 S2 The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID 8 20V 32mΩ 4.
7A Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Line...

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