SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.
5V gate drive Low drive current Surface-mount package G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
RoHS compliant.
Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temp...

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