SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low Gate Charge Single Drive Requirement Surface Mount Package DESCRIPTION D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 80V 90mΩ 3.
5A The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS G1 D1 G2 S1 D2 S2 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Li...

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