2SK3543
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3543
Switching
Regulator and DC-DC Converter Applications Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.
9 Ω (typ.
) · High forward transfer admittance: |Yfs| = 1.
3 S (typ.
) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) · Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy ...