SSM2302N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.
5V gate drive Small package outline Surface-mount package Description D SOT-23 G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
BV DSS RDS(ON) ID 20V 85mΩ 2.
8A D Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.
5V Continuous Current3, VGS @ 4.
5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data S...

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