SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.
5V gate-drive Lower on-resistance Surface-mount package Description D SOT-23 G S BVDSS RDS(ON) ID Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.
The SOT-23 package is widely used for commercial and industrial applications.
G 20V 32mΩ 5.
3A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.
5V Continuous Drain Current3, VGS @ 4.
5V Pulsed Drain Current1,2 Total Power Dissipati...

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