HCD80R650E Super Junction MOSFET March 2017 HCD80R650E 800V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low switching loss  Excellent stability and uniformity  100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.
65 12 Unit V A Ω nC Application  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)  Motor Control & LED Lighting Power  DC-DC Converters Package & Internal Circuit D-PAK Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source...

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