2N7637-GA
Normally – OFF Silicon Carbide Junction
Transistor
Features
• 210°C maximum operating temperature • Electrically Isolated Base Plate • Gate Oxide Free SiC Switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Compatible with 5 V TTL Gate Drive • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs • 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth
Package
• RoHS Compliant
VDS RDS(...