2N7640-GA
Normally – OFF Silicon Carbide Junction
Transistor
Features
225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Compatible with 5 V TTL Gate Drive Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth
Package
RoHS Compliant
VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C)
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