GA05JT01-46
Normally – OFF Silicon Carbide Junction
Transistor
Features
225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Compatible with 5 V TTL Gate Drive Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
Package
RoHS Compliant
D SG
TO-46
VDS =
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
100 V 240 mΩ 9A 110
D G
S
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minim...