GA05JT12-263
Normally – OFF Silicon Carbide Junction
Transistor
Features
Package
VDS RDS(ON) ID
= 1200 V = 260 mΩ = 5A
175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Positive temperature coefficient for easy paralleling Low gate charge Low intrinsic output capacitance
RoHS Compliant D
DS G
D
G S
TO-263
Advantages
Applications
SiC
transistor most compatible with existing Si gate-drivers Low switching losses Higher efficiency High temperature operation High short circuit withstand capability
Absolute Maximum Ratings
Down Hole Oil Drilling, Ge...