Die Datasheet
GA50JT17-CAL
Normally – OFF Silicon Carbide Junction
Transistor
Features
210 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
VDS = 1700 V
RDS(ON)
= 20 mΩ
ID @ 25 oC = 100 A
hFE = 85
Die Size = 4.
35 mm x 4.
35 mm
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandw...