SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 110A,55V,RDS(on)（typ）=6.
4mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
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