SVD830T/F/D_Datasheet
4.
5A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD830T/F/D is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4.
5A,500V,RDS(on(typ)=1.
3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
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