SVS6N80T/D/F_Datasheet
6A, 800V DP MOS POWER
TRANSISTOR
DESCRIPTION
SVS6N80T/D/F is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.
e.
, suitable for hard and soft switching topologies.
FEATURES
6A,800V, RDS(on)(typ.
)=0.
8Ω@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
ORDERING INFORMATION...