MITSUBISHI LSls
M5M4257P-12, -15, -20
262 144·BIT (262 144·WORD BY I.
BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer polysi licon process combined with silicide technology and a single
transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation.
Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package conf...