MITSMUIBTSISUHBI ISLHSIsLSIs
M5M4V4405MC5JM,4TVP44-065,C-J7,T,-P6-6S,-7,,--76SS,-7S
EDOE(DHOYP(HEYRPPEARGPEAMGOEDMEO) D41E9)44310944-3B0I4T-B(1I0T4(180547865-W76O-WRDORBDY B4-YB4IT-B) DITY)NDAYMNIACMRICAMRAM
DESCRIPTION
This is a family of 1048576-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power dissipation , and low costs are essential.
The use of quadruple-layer polysilicon process combined with silicide technology and a single-
transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.
Multiplexed address inputs permit both a reduction in pins and ...