MITMSUITBSIUSBHISLHSIIsLSIs
M5MM5M444422660C0JC,TJP-,5T,-P6,--75,-,5-S6,-,6-S7,-,7S
-5S,-6S,-7S
FASFTASPTAGPAEGMEOMDOE D4E19441390443-B04IT-B(I2T62(2164241-W44O-WRODRBDY B1Y6-B16IT-B) IDTY) NDAYMNAICMRICAMRAM
DESCRIPTION
This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-
transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.
Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
Self or...