N & P‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS RDSON (MAX.
)
N‐CH 30V 21mΩ
P‐CH ‐30V 40mΩ
D1 G1
D2 G2
ID
8A ‐6A
S1 S2
UIS, 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB21C03A
LIMITS
UNIT
Gate‐Source Voltage
VGS
N‐CH
P‐CH
V
±20 ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.
1mH, ID=10A, RG=25Ω(N) L = 0.
1mH, ID=‐10A, RG=25Ω(P)
Repetitive Avalanche Energy2
L = 0.
05mH
Power Dissipation
TC = 25 °C TC = 100 °...