N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.
)
5.
5Ω
ID UIS, 100% Tested
2A
G S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 3mH, ID=2A, RG=25Ω L = 0.
5mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SY...