N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.
)
220mΩ
ID 1.
4A G
UIS 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
EMBB0N10J
LIMITS ±20 1.
4 0.
85 5.
6 1.
25 0.
8
‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐ Ambient
RJA ...