N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.
)
6mΩ
ID 18A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=20A, RG=25Ω
L = 0.
05mH
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
EMB06N03G
LIMITS ±20 18 12 72 20 20 10 2.
5 1
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