N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.
)
1.
6mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMP16N04HS
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
100 100 400
Avalanche Current
IAS 85
Avalanche Energy Repetitive Avalanche Energy3
L = 0.
1mH, ID=85A, RG=25Ω
L = 0.
05mH
EAS EAR
361 180
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperat...