®
CB45000 SERIES
HCMOS6 STANDARD CELLS
FEATURES
s
s s s
s
s s s
s s s
0.
35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates.
3.
3 V optimized
transistor with 5 V I/O interface capability 2 - input NAND delay of 160 ps (typ) with fanout = 2.
Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS.
Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels High drive I/O; capability of sinking up to 24 mA with slew rate control, current spike suppression and impedance matching.
Generators to support Single Port RAM, Dual Port RAM, and ROM with BIST options.
DRAM integration in ASIC...