N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.
)
7mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB07N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
50 35 140
Avalanche Current
IAS 37.
5
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=37.
5A, RG=25Ω
L = 0.
05mH
EAS EAR
70 15
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Ran...