NDDP010N25AZ Power MOSFET 250V, 10A, 420mΩ, N-Channel www.
onsemi.
com Features  High Speed Switching  Low Gate Charge  ESD Diode-Protected Gate  100% Avalanche Tested  Pb-Free, Halogen Free and RoHS Compliance Electrical Connection 2,4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW10s, duty cycle1% VDSS VGSS ID IDP Power Dissipation Tc=25C PD Junction Temperature Tj Storage Temperature Tstg Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds IS EAS TL Thermal Resistance...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)