NGTB15N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology • 1350 V Breakdown Voltage • Optimized for Low Case Temperature in IH Cooker Application • Reliable and Cost Effective Single Die Solution • These are Pb−Free Devices
Typical Applications
• Inductive Heating • Consumer Appliances • Soft Switching
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