WNM12N65/WNM12N65F 650V N-Channel MOSFET
Description
The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.
WNM12N65/WNM12N65F
Features
650V@TJ=25°C Typ.
RDS(on)=0.
57Ω Low gate charge 100% avalanche tested 100% Rg tested
D
GDS
TOT-O22- 0
12N65
12N65F
G S
GD S
TO-220F
WNM12N65 =Devices code
Y Y =Year WW =Week
WNM12N65 F =Devices code
Y Y =Year WW =Week
Order Information
Device
Package
WNM12N65_3/T
TO-220
WNM12N6...