WNM4153
N-Channel, 20V, 0.
88A, Small Signal MOSFET
VDS (V) 20
RDS(on) (Ω)
0.
220 @ VGS=4.
5V 0.
260 @ VGS=2.
5V 0.
320 @ VGS=1.
8V
Descriptions
The WNM4153 is the N-Channel enhancement MOS Field Effect
Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion applications.
Standard Product WNM4153 is Pb-free.
Features
Trench N-Channel Supper high density cell design for extremely low Rds(on) Exceptional ON resistance and maximum DC current capability Small package design with SOT-523
WNM4153
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D 3
12 GS
SOT-523
D 3
12 GS
Pin Configuration
3
N3F
12
N3 = Device Code F =...