WNMD6003
Dual N-Channel, 60V, 0.
30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.
4@ VGS=10V 60
1.
7@ VGS=4.
5V
ESD Rating:2000V HBM
Descriptions
The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD6003 is Pb-free and Halogen-free.
WNMD6003
Http//:www.
sh-willsemi.
com
SOT-563
D1 G2 S2 6 54
1 23 S1 G1 D2
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-563
Appl...