WPM3401
Single P-Channel, -30V, -4.
6A, Power MOSFET
VDS (V) -30
Max RDS (on) (mΩ) 53@ VGS=-10V 56@ VGS=-4.
5V
WPM3401
www.
sh-willsemi.
com
Descriptions
The WPM3401 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize onstate resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Small package SOT-23-3L
Applications
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