WNM6002
Single N-Channel, 60V, 0.
30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.
4@ VGS=10V 60
1.
7@ VGS=4.
5V
ESD Rating:2000V HBM
Descriptions
The WNM6002 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM6002 is Pb-free and Halogen-free.
WNM6002
Http//:www.
sh-willsemi.
com
SOT-323
D 3 12 GS
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-323
Applications
Driver for Relay...