WNM2046B
Single N-Channel, 20V, 0.
71A, Power MOSFET
VDS (V) 20
Typical Rds(on) (Ω) 0.
220@ VGS=4.
5V 0.
260@ VGS=2.
5V 0.
315@ VGS=1.
8V
WNM2046B
Http://www.
sh-willsemi.
com
G S
D
Descriptions
DFN1006-3L
The WNM2046B is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046B is Pb-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package DFN1006-3L
Applications
D
GS
Pin configuration...