Part Number
|
MBM29SL160TD-10 |
Manufacturer
|
Fujitsu |
Description
|
16M (2M x 8/1M x 16) BIT FLASH MEMORY |
Published
|
May 6, 2017 |
Detailed Description
|
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
DS05-20877-1E
MBM29SL160TD-10/-12/MBM29SL1...
|
Datasheet
|
MBM29SL160TD-10
|
Overview
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
DS05-20877-1E
MBM29SL160TD-10/-12/MBM29SL160BD-10/-12
s FEATURES
• Single 1.
8 V read, program, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles • High performance
100 ns maximum access time • Sector erase architecture
Eight 4K word and thirty one 32K word sectors in word mode Eight 8K byte and thirty one 64K byte sectors in b...
Similar Datasheet