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Part Number
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MBM29F016A-70 |
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Manufacturer
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Fujitsu |
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Description
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16M (2M x 8) BIT FLASH MEMORY |
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Published
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May 7, 2017 |
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Detailed Description
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FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20844-4E
MBM29F016A-70/-90/-12
s FEATURES
• ...
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Datasheet
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MBM29F016A-70
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Overview
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20844-4E
MBM29F016A-70/-90/-12
s FEATURES
• Single 5.
0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection
• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) • Minimum 100,000 write/erase cycles • High performance
70 ns maximum access time • Sector erase architecture
Uniform sectors of 64 K bytes each Any combination of sectors can be erased.
Also supports full chip erase.
• Embedded Erase™ Algorithms Automatically pre-programs and e...
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