Part Number
|
MBM29F040A-90 |
Manufacturer
|
Fujitsu |
Description
|
FLASH MEMORY 4M 512K x 8 BIT |
Published
|
May 7, 2017 |
Detailed Description
|
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
MBM29F040A - 70/-90/-12
DS05–20810–3E
s DISTINCTI...
|
Datasheet
|
MBM29F040A-90
|
Overview
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
MBM29F040A - 70/-90/-12
DS05–20810–3E
s DISTINCTIVE CHARACTERISTICS
• Single 5.
0 V read, write and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard byte-wide pinouts 32-pin PLCC (Package suffix: PD) 32-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) Note: If there are special requirements not specified above (such as DIP package), please contact Fujitsu sales office.
• Minimum 100,000 write/erase cycles • High performance
70 ns maximum access time • Sector erase architecture
8 equa...
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