Part Number
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MBM29LV016B-90 |
Manufacturer
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Fujitsu |
Description
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16M (2M x 8) BIT FLASH MEMORY |
Published
|
May 7, 2017 |
Detailed Description
|
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20855-4E
MBM29LV016T-80/-90/-12/MBM29LV016B-8...
|
Datasheet
|
MBM29LV016B-90
|
Overview
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20855-4E
MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12
s FEATURES
• Single 3.
0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
• Minimum 100,000 program/erase cycles • High performance
80 ns maximum access time • Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased.
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