SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
• Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.
5A) • Hermetic TO-39 Metal package.
• Ideally Suited For Medium Power Amplifier And
Switching Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
75V
VEBO
Emitter – Base Voltage
7V
IC Continuous Collector Current
2A
IB Base Current
1.
0A
PD Total Power Dissipation at TA = 25°C
1.
0W
Derate Above 25°C
5.
71mW/°C
PD Total Power Dissipation at TC = 25°C
7W
Derate Above 25°C
40mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +20...