TECHNICAL DATA
NPN HIGH POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/456
Devices
2N5302
2N5303
Qualified Level
JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current Total Power Dissipation
@ TA = +250C(1) @ TC = +1000C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 28.
57 mW/0C for TA = +250C 2) Derate linearly 1.
14 W/0C for TC = +1000C
Symbol VCEO VCBO VEBO IC IB
PT
TJ, Tstg
Symbol RθJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
...