Bipolar
Transistor
Collector 3
2 Base
1 Emitter
Description:
A epitaxial silicon
PNP planar
transistor in a TO-39 type package designed for use as drivers for high power
transistors in general purpose amplifier and switching circuits.
Maximum Ratings:
Characteristic Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TC = +25°C) Total Device Dissipation(TA = +25°C) Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-Case
Symbol VCEO IE
IC
IB
Ptot
TJ Tstg RthJC
Rating
80
7 1 200 6 1
-65 to +200
29
Unit
V
A mA W
°C °C/W
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