SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4237
• VCBO=50V(Min), VCEO=40V(Min) • Hermetic TO-39 Metal package.
• Ideally suited for General Purpose and
Amplifier Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
50V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
1.
0A
IB Base Current
0.
5A
PD Total Power Dissipation at TA = 25°C
1.
0W
Derate Above 25°C
5.
7mW/°C
PD Total Power Dissipation at TC = 25°C
6W
Derate Above 25°C
34mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIE...