Part Number
|
1N3212 |
Manufacturer
|
GeneSiC |
Description
|
Silicon Standard Recovery Diode |
Published
|
Jun 2, 2017 |
Detailed Description
|
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive
No...
|
Datasheet
|
1N3212
|
Overview
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive
Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N3212 thru 1N3214R
VRRM = 400 V - 600 V IF = 15 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3212 (R)
1N3213 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 150 °C TC = 25 °C, tp = 8.
3 ms
4...
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