FMR17N60ES
Super FAP-E3S series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.
2±0.
5V) High avalanche durability
Applications Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Outline Drawings [mm]
TO-3PF
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current Pulsed Drain Current ...