Part Number
|
1N4150-1 |
Manufacturer
|
MA-COM |
Description
|
Silicon Switching Diode |
Published
|
Jun 12, 2017 |
Detailed Description
|
1N3600, 1N4150 & 1N4150-1
Silicon Switching Diode
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
...
|
Datasheet
|
1N4150-1
|
Overview
1N3600, 1N4150 & 1N4150-1
Silicon Switching Diode
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
Metallurgically Bonded Hermetically Sealed Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.
3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0
Rev.
V1
Electrical Specifications @ +25°C (unless otherwise Specified)
TYPE #
VBR IR = 10 μA
VRWM
1N3600 1N4150, -1
V dc 75 75
V (pk) 50 50
IR1 VR = 50 Vdc
TA = 25°C
μA dc 0.
1 0.
1
IR2 VR = 50 Vdc TA =150°C
μA dc 100 100
C Trr
IR = 0; f = 1 MHz
IF = ...
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