BFX85

BFX80 : .

BFX81 : .

BFX84 : BFX84 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 60 1 Units V A - @ 10/10m (VCE.

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BFX84 : .

BFX84 : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Total Device Dissipation @ Ta=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range VALUE 60 100 6.0 1.0 0.8 4.57 -65 to +200 UNITS V V V A W mW/ºC ºC THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) 220 ºC/W 35 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Collector Cut off Current SYMBOL BVCEO BVCBO ICBO Emitter Cut off Current DC Current Gain IEBO hFE Collector Emitter (Sat) Voltage V.

BFX85 : DESCRIPTION NPN transistor in a TO-39 metal package. 3 2 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C Tcase ≤ 100 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS MIN. − − − − − 70 50 TYP. − − − − − 142 − 360 MAX. 100 60 1 800 2.86 − − − MHz ns UNIT V V A mW W ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 1997 Apr 22 2 Philips Semiconductors Product specification NPN switching transistor LIMITING.

BFX85 : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Total Device Dissipation @ Ta=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range VALUE 60 100 6.0 1.0 0.8 4.57 -65 to +200 UNITS V V V A W mW/ºC ºC THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) 220 ºC/W 35 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Collector Cut off Current SYMBOL BVCEO BVCBO ICBO Emitter Cut off Current DC Current Gain IEBO hFE Collector Emitter (Sat) Voltage V.

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BFX85 : BFX85 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON EPITAXIAL SWITCHING TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V IC = 1A 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) APPLICATIONS • General Purpose Switching and Amplification • Industrial Applications • Hermetic Metal Package • Hi-Rel Screening Options Available TO39 (TO-205AD) Underside View PIN 1 – Emitter PIN 2 – Base PAD 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collecto.

BFX85 : Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD Tj, T stg Symbol RwjC Roja Value 60 100 6.0 1.0 0.8 4.57 -65 to +200 Max 35 220 Unit Vdc Vdc Vdc Amp Watt mW/°C °C Unit °C/W °c/w BFX85 CASE 79, STYLE 1 TO-39 (TO-205AD) AMPLIFIER TRANSISTOR NPN SILICON Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector.

BFX86 : BFX86 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 35V 5.08 (0.200) typ. IC = 1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 35 1 Units V A - @ 10/10m (VCE.

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BFX87 : BFX87 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 50V 5.08 (0.200) typ. IC = 0.6A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 50 0.6 Units V A - @ 10/10m .

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