® ISO 9001 Registered
Process C1210
CMOS 1.
2µ m Zero Threshold Devices
Electrical Characteristics
N-Channel
Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis.
Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Symbol VTZLN γZLN βZLN IDSATZN Minimum 0.
55 64 0.
8 9 10 Minimum 0.
00 75 28 Typical 0.
15 0.
348 90 34 Typical 0.
75 0.
34 75 1.
0 0.
6
T=25oC Unless otherwise noted Maximum Unit Comments 0.
95 V 100x1.
2µm V1/2 100x1.
2µm 86 µA/V2 100x100µm 1.
2 µm 100x1.
2µm µm Per side V V
Maximum 0.
30 105 40 Unit V V1/2 µA/...