MMBT9014【Switching Diode / 200mW / SOT-23】
NPN Silicon Epitaxial Planar
Transistors
Features
◆ Switching and AF amplifier applications
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Symbol
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current
Ic
Power Dissipation
PD
DC Current Gain
VCE=5V, IC=2mA VCE=5V, IC=2mA
MMBT9014B MMBT9014C
hFE
VCE=5V, IC=2mA MMBT9014D
Collector Base Breakdown Voltage
IC=100μA
V(BR)CBO
Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Saturation Voltage Collector Cutoff Current
IC=1mA IC=100μA IC=100mA, IB=5mA VCB = 50 V
V(BR)CEO
V(BR)EBO VCEsat
ICBO
Emitte...