MMBT9013【
NPN Transistors / 200mW / SOT-23】
NPN Silicon Epitaxial Planar
Transistors
Features
◆ Switching and Amplifier applications
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Symbol
Min
Typ
Max
Collector Emitter Voltage Emitter Base Voltage Collector Current
VCEO VEBO
-----
30 5
Ic ----- 500
---------
Power Dissipation
VCE=1V, IC=100mA MMBT9013G
DC Current Gain
VCE=1V, IC=100mA MMBT9013H
VCE=1V, IC=500mA
Collector Emitter Breakdown Voltage
IC=1mA
Collector Saturation Voltage
IC=500mA, IB=20mA
Base Saturation Voltage
IC=500mA, IB=20mA
Collector Cutoff Current
VCB = 31 V
Emitter Base Cutoff Current
VEB = 5.
1 V
PD
hFE
V(BR)CEO VCEsat VBE sat ICBO
IEBO...